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Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co | 論文
- Reactive Ion-Beam Etching of InP with Cl_2
- Characterization of a New Cu-Al-Se Phase Grown by Molecular Beam Epitaxy
- Chopping Frequency Dependence of Photoacoustic Spectrum in Porous Silicon
- Photoacoustic Spectrum and Surface Morphology of Porous Silicon
- Application of the Mesh Experiment for the Back-illuminated Charge-Coupled Device : I. Experiment and the Charge Cloud Shape
- Direct X-Ray Imaging of μm Precision Using Back-Illuminated Charge-Coupled Device
- Dislocation Velocities in InAs and GaSb
- Dislocation Velocities in GaAs
- Formation of a Cu-Al-Se Phase with a Long-Range Order by Molecular Beam Epitaxy
- Characterization of Novel Cu-Al-Se Films Grown by Molecular Beam Epitaxy
- Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy
- Effect of Arsenic Source on Electron Trap Concentrationsin MBE-Grown Al_Ga_As
- Effects of Growth Conditions on Electron Trap Concentrations in Si-Doped Al_Ga_As Grown by MBE
- Single-Crystalline Epitaxial ZnS Waveguides for Phase Matched Second Harmonic Generation Devices
- Characterization of CuAlS_2 Films Grown by Molecular Beam Epitaxy
- Preparation and Properties of Single Crystal CuAlSe_2 Film