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Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University | 論文
- Ultra-Short Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
- Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
- Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
- A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
- A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
- High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
- High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
- High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Resonant Tunneling Chaos Generator for High-Speed/Low-Power Frequency Divider
- Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
- A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
- High Power and Stable Oscillations in the RTD Pair Oscillator ICs Fabricated with Metamorphic RTDs
- Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
- Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)