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Nichia Corp. Tokushima Jpn | 論文
- Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
- Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
- Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
- Ultra-High Efficiency White Light Emitting Diodes
- A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
- Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
- Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
- CW Operation of the First-Order AlInGaN 405nm Distributed Feedback Laser Diodes
- 365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
- High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
- Ultraviolet GaN Single Quantum Well Laser Diodes
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
- Velocity of Sound in and Elastic Properties of Cs_2O-B_2O_3 Glasses
- Hydrogen Dissociation from Mg-doped GaN