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National Nano Device Laboratory:department Of Electronics Engineering And Institute Of Electronics N | 論文
- The Impact of Titanium Silicide on the Contact Resistance for Shallow Junction Formed by Out-Diffusion of Arsenic from Polysilicon
- Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays
- Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
- Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
- Suppression of Boron Penetration in BF^+_2-Implanted Poly-Si Gate
- Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
- A Novel Shallow Trench Isolation Technique
- A Novel Shallow Trench Isolation Technique
- Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
- A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask
- Suppression of Boron Pemetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate