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National Nano Device Laboratories, Hsinchu 300, Taiwan | 論文
- Control Cell Behavior on Physical Topographical Surface
- Optimization of the Anti-Punch-Through Implant for Electrostatic Discharge Protection Circuit Design
- An Efficient Threshold Voltage Control in Complementary Metal–Oxide–Semiconductor Field Effect Transistor Using Spacer Stress Engineering
- Investigation of Minority Carrier Distribution in Semiconductor-Controlled Rectifier Devices and the Impact on Electrostatic Discharge Applications
- Local Oxidation Fin-Field-Effect-Transistor Structure for Nanodevice Applications
- Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
- Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
- Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
- Investigation of Spacer Engineering on n-Type Field Effect Transistor Performance during Laser Spike Annealing
- Design and Analysis of On-Chip Tapered Transformers for Silicon Radio-Frequency Integrated Circuits