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National Nano Device Lab. Hsinchu Twn | 論文
- Reactive Ion Pretreatment Technique to Improve the Ashing Resistance of Low Dielectric Constant High Carbon Content Polymer
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
- Cytochrome P450 1A1 (CYP1A1) T3801C and A2455G polymorphisms in breast cancer risk: a meta-analysis
- Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure
- Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface
- Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H_2 Plasma Treatment
- Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
- Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
- Photoluminescence of Heavily p-Type-Doped GaAs : Temperature and Concentration Dependences
- Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
- Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
- Ion Beam Etching for InSb Photovoltaic Detector Applications
- The Effects of Reverse Injection Current on High a Quality InSb Photovoltaic Detector
- Critical Dimension Control of Poly-Butene-Sulfone Resist in Electron Beam Lithography
- A46G and C79G polymorphisms in the β2-adrenergic receptor gene (ADRB2) and essential hypertension risk : a meta-analysis