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National Chiao‐tung Univ. Hsinchu Twn | 論文
- An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications
- A CMOS Dual-Mode RF Front-End Receiver for GSM and WCDMA Applications(RF, Analog Circuit and Device Technologies)
- Low-Temperature-Processed Poly-Si Thin-Film Transistors Using Solid-Phase-Crystallized and Liquid-Phase-Deposited Gate Oxide
- Experimental Comparison of Off-State Current between High-Temperature- and Low-Temperature-Processed Undoped Channel Polysilicon Thin-Film Trarnsistors
- Formation of Bilayer Shallow MoSi_2/CoSi_2 Salicide Contact Using W/Co-Mo Alloy Metallization
- Novel Barrier Dielectric Liner Prepared by Liquid-Phase Deposition and NH_3-Plasma Annealing
- Novel Sidewall Capping for Degradation-Free Damascene Trenches of Low-Permittivity Methylsilsesquioxane
- Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
- Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
- Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
- Fabrication and Characterization of the Pd-Silicided Emitters for Field-Emission Devices
- Characterization and Fabrication of Chimney-Shaped Metal Field Emitters
- Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays
- Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures
- A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm
- Preparation and Electrornic Properties of YBa_2Cu_3O_x Films with Controlled Oxygen Stoichiometries
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
- Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
- Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition