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Nano Device Research Center Korea Institute Of Science And Technology | 論文
- Room Temperature Electron-Mediated Ferromagnetism in a Diluted Magnetic Semiconductor: (Ga,Mn)N
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- Self-Assembled Quantum Dots : Physics and Device Appications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Self-Assemble Quantum Dots : Physics and Device Appications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Self-Assembled Quantum Dots : Physics and Device Appications
- Self-Assembled Quantum Dots : Physics and Device Appications
- Fabrication and characterization of a in-plane gate single electron tunneling transistor (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Fabrication and characterization of a in-plane gate single electron tunneling transistor (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Enhanced Characteristics of In_Ga_As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment
- Study of Chirped Quantum Dot Superluminescent Diodes
- Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
- Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Role of Induced Anisotropy in the Spin-Flop Switching of Circular Cells for Magnetic Random Access Memory
- Magnetotransport in (Ga,Mn)N Ferromagnetic Semiconductors Grown by Plasma-Enhanced Molecular Beam Epitaxy