スポンサーリンク
Nagaoka Univ. Technol. Nagaoka Jpn | 論文
- Nonlinear Effects near the Superconducting Transition of Organic Synthetic Metal (TMTSF)_2ClO_4
- Nonlinear Effect above the Superconducting Critical Current in (TMTSF)_2ClO_4
- Evidence for Three Dimensional Ordering of Superconductivity in Highly Anisotropic Organic Conductor, (TMTSF)_2ClO_4
- Measurements of Impurity Diffusion Coefficients in Ionic Melts with High Accuracy under Microgravity (特集 MSL-1(3))
- Improvement in Layer Quality of CuGaS_2 Grown by Vapor Phase Epitaxy with Metal Chlorides and H_2S Sources
- Interaction between Particles and a Wave in a System of Magnetic-Trapping Acceleration by an Electromagnetic Wave : Nuclear Science, Plasmas and Electric Discharges
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
- Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
- Raman Scattering and Two-Phonon Infrared Transmission Spectra of Cu(Al_xGa_)S_2 Crystals
- Vapor-Phase Atomic Layer Epitaxy of CuGaS_2 at Atmospheric Pressure Using Metal Chlorides and H_2S
- Optical and Electrical Characterization of CuGaS_2 Grown by Vapor Phase Epitaxy
- Deep Region Emissions of CuGaS_2 Crystals
- Resonant Raman Scattering and Excitonic Polariton States in CuGaS_2
- Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography
- Mierodefects in an As-Grown Czoehralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
- Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography