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NTT LSI laboratories | 論文
- Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
- Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Photoresponse of Carbon Nanotube Field-Effect Transistors
- Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Effect of Oxygen Doping into SiBN Ternary Film
- Study of Potential Formation in an Open Magnetic Field Configuration
- Energy Analysis of ECRH-Induced End-Loss Warm Electrons in a Tandem Mirror
- Neutral Stream Extraction from Electron Cyclotron Resonance Plasma by Using Parallel Magnetic Field
- Generation of Electron Cyclotron Resonance Neutral Stream and Its Application to Si Etching
- Resonant-Inverse Photoemission Study of Pr Compounds in 4d-4f Excitation Region(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Interpretation of Magnetic Circular Dichroism of X-ray Emission Spectra(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam