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NTT Electrical Communications Laboratories | 論文
- Compositional Disordering of GaAs-Al_xGa_As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
- SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
- Modification Effect of a-Si_ N_x:H Surface by Hydrogen Radicals
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
- Technologies for Artificial Semiconductor Atoms
- Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
- Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- Photoregulation of Tilt Angle of Nematic Liquid Crystals by Azobenzene Layers