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NTT Basic Research Laboratories, NTT Corporation | 論文
- Investigation of Ferromagnetic Microstructures by Local Hall Effect and Magnetic Force Microscopy
- Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode
- Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of Rashba Spin-Orbit Coupling
- 31a-ZF-6 Spin-split subbands in an inverted InGaAs/InAlAs heterostructure
- Superconducting Three-Terminal Devices Using an InAs-Based Two-Dimensional Electron Gas
- 27aVE-9 Controllable persistent current in a superconducting flux qubit
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Control of Electrical Properties of Single-walled Carbon Nanotubes by Low-energy Electron Irradiation
- Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors
- Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
- Superconducting Proximity Effect on Piezoresistance in a Superconductor-Semiconductor Junction
- Strongly Enhanced Sensitivity of Piezoresistive Cantilevers by Utilizing the Superconducting Proximity Effect
- Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
- Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
- Formation of Solid Solution of Al_Si_xN (0
- Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
- Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors