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NTT Basic Research Laboratories, NTT Corporation | 論文
- GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
- Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate ( Quantum Dot Structures)
- Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
- Single-Electron Detection in Si-Wire Transistors at Room Temperature
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- 23aWQ-5 Observation ofσ_x coupling signal in a gap-tunable flux qubit
- Oxidation Patterning of GaAs by Nanoelectrode Lithography
- High-resolution RBS analysis of Si-dielectrics interfaces
- Bidirectional Current Drag Induced by Two-Electron Cotunneling in Coupled Double Quantum Dots
- Spin-conserved Single-electron Transport between Zeeman Sublevels in a Few-electron Quantum Dot
- Electrostatic coupling between two double-quantum dots studies by resonant tunneling current
- Long Spin Relaxation Time Observed in a Lateral Quantum Dot
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in InAlAs/InGaAs/InAlAs Quantum Wells as a Function of Quantum Well Asymmetry
- Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of the Rashba Spin-Orbit Coupling