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Mitsubishi Electric Corp. Amagasaki‐shi Jpn | 論文
- Laser-Induced Enhancement of Electron-Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well
- Electron Localization due to Symmetry Breaking in Nonlinear Coupled-Quantum Systems
- ac Field-Induced Localization of an Electron in a Double-Well Quantum Structure
- GaAs/AlGaAs Optical Interconnection Chip for Neural Network (SOLID STATE DEVICES AND MATERIALS 1)
- Electrical Characterization of Au/p-ZnSe Structure
- Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H_2Se
- Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy
- Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices
- A High Efficiency Bias Condition Optimized Feedforward Power Amplifier with a Series Diode Linearizer(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
- A Millimeter-Wave Pulse Transmitter with a Harmonic Mixer(Recent Devices, Circuits, and Systems for Millimeter-wave ITS Applications)
- A Low-Loss Serial Power Combiner Using Novel Suspended Stripline Couplers(Recent Trends of Microwave and Millimeter-Wave Passive Circuit Components and Technologies for Improvement of Characteristics)
- Distortion Characteristics of an Even Harmonic Type Direct Conversion Receiver for CDMA Satellite Communications (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- Synthesis and Herbicidal Activity of Pyridinyloxyphenoxypropionamides
- A Design Consideration of Gain-Switching Semiconductor Lasers
- Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
- Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (111)B Substrates
- A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer Epitaxy
- Real-Time Observation of GaAs (001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction : Surfaces, Interfaces and Films