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Millimeter-wave INnovation Technology research center (MINT), Dongguk University | 論文
- Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic HEMTs for the Millimeter-wave Applications(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic : HEMTs for the Millimeter-wave Applications (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
- W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
- Analysis of characteristics of PHEMT's fabricated by gate recess methods
- Analysis of characteristics of PHEMT's fabricated by gate recess methods
- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
- RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II,AWAD2006)
- RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II)
- An Analysis of the Kink Phenomena in GaAs-based Short-gate MHEMTs Using 2D Hydrodynamic Device Simulation(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)
- An Analysis of the Kink Phenomena in GaAs-based Short-gate MHEMTs Using 2D Hydrodynamic Device Simulation(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)
- The low conversion loss and LO power V-band MIMIC Up-mixer(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- The low conversion loss and LO power V-band MIMIC Up-mixer(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
- Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Studies on channel and gate recess modification of metamorphic HEMT for the improved breakdown characteristics and RF performance (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
- Electrical Characteristics of the 0.1μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations