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Microelectronics Research Center, Sanyo Electric Co., Ltd. | 論文
- Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing - Dependences of Poly-Si Grain on Energy Density and Shot Number -
- Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing
- Extension of Physical Limit of Conventional Metal-Oxide-Semiconductor Transistor by Double Barriers Formed at the Channel Edges
- Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
- Improvement of Etching Selectivity to Photoresist for AI Dry Etching by Using Ion Implantation (Special Issue on Scientific ULSI Manufacturing Technology)
- Grain Morphology of Recrystallized Polycrystalline-Si Film by Excimer Laser Annealing
- Characterization of Poly-Silicon Film Prepared by Excimer Laser Annealing
- Silicon Resonant Tunneling Metal-Oxide-Semiconductor Transistor for Sub-0.1μm Era(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
- Dependence of SiC Blue Light-Emitting Diode Efficiency on the p-Type Layer Growth Temperature
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors
- Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors
- Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
- New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
- A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-μm Gate Length
- A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the Channel
- Reduction in Operating Current of High-Power 660nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- A New Low-Temperature Oxidation Technique by Gas Cluster Ion Beams