Improvement of Etching Selectivity to Photoresist for AI Dry Etching by Using Ion Implantation (Special Issue on Scientific ULSI Manufacturing Technology)
スポンサーリンク
概要
- 論文の詳細を見る
A novel method has been developed to improve the dry etching selectivity of aluminum alloy with respect to photoresist by implanting ions into the patterned photoresist. The selectivity becomes 7.5, which is 5 times higher than that of the unimplanted case. Accordingly, this technology is very promising for fabricating multi-level interconnections in sub-half micron LSIs.
- 社団法人電子情報通信学会の論文
- 1996-03-25
著者
-
Shibata K
Hachinohe Inst. Of Technol. Hachinohe‐shi Jpn
-
UEDA Keiichi
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
SHIBATA Kiyoshi
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
MAMENO Kazunobu
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
Ueda Keiichi
Microelectronics Research Center Sanyo Electric Co. Ltd.
-
Mameno K
Microelectronics Research Center Sanyo Electric Co. Ltd.
-
Mameno Kazunobu
Microelectronics Research Center Sanyo Electric Co. Ltd.
関連論文
- Improvement of Etching Selectivity to Photoresist for AI Dry Etching by Using Ion Implantation (Special Issue on Scientific ULSI Manufacturing Technology)
- Selective-Area Growth for Novel 1.3 μm Distributed Feedback Laser Diodes with Graded Grating
- 1.3μm High Performance FS-BH Laser Diodes with Waveguide Lens for Optical Access Network (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Measurement of Complex Permittivity for Liquid Phantom by Transmission Line Method Using Coaxial Line(General Methods, Materials, and Passive Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter
- Estimation of Complex Permittivity Using Rectangular Waveguide with Flange by FDTD Method
- Elimination of Negative Charge-Up during High Current Ion Implantation (Special Issue on Quarter Micron Si Device and Process Technologies)