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Matsushita Electric Industrial Co. Ltd. (panasonic) | 論文
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- Advanced Surface Modification Resist Process for ArF Lithography
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Modified Constrained Notch Fourier Transform (MCNFT) for Sinusoidal Signals in Noise and Its Performance
- Performance Analyses of Notch Fourier Transform(NFT) and Constrained Notch Fourier Transform(CNFT)
- Relations between Several Minimum Distance Bounds of Binary Cyclic Codes
- Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
- Phase-Transfer Photopolymerization of Methyl Methacrylate with N-Cetylpyridinium Chloride-KSCN-CCl4 in an Aqueous-Organic Two-Phase System
- Phase-Transfer Photopolymerization of Methyl Methacrylate with Tetrabutylammonium Chloride-KSCN-CCI_4 in an Aqueous-Organic Two-Phase System
- Photopolymerization of Methyl Methacrylate with N-Cetylpyridinium Chloride-KSCN-CCI_4 in Aqueous System
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
- Surface Modification Resists Using Photoacid and Photobase Generating Polymers
- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
- Positive Surface Modification Resist System