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Materials Department And Erato Jst Ucsb Group University Of California | 論文
- CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
- MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
- The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
- CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs
- AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
- Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
- High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
- High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-$c$-Plane Oriented GaN Substrates
- AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
- Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
- Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents
- High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes
- Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20\bar{2}\bar{1}) Blue Light-Emitting Diodes
- Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
- Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
- Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes