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Materials And Devices Lab Samsung Advanced Institute Of Technology | 論文
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti)O_3 Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor
- Isopropanol Effects on the Phase Formation and Texturing of Sol-Gel Derived PMN Thin Films
- Effects of Seeding Layer on Orientation and Phase Formation of Sol-Gel-Derived Lanthanum-Modified Lead Zirconate Titanate Films on Glass
- Effects of Substrate and Bottom Electrodes on the Phase Formation of Lead Zirconate Titanate Thin Films Prepared by the Sol-Get Method
- Effects of Seeding Layer on Perovskite Transformation, Microstructure and Transmittance of Sol-Gel-Processed Lanthanum-Modified Lead Zirconate Titanate Films
- Application of Scanning Probe Microscope for Novel Characterization of Ferroelectric Capacitor
- Ferroelectric Properties of Very Thin Pb(Zr_Ti_)O_3 Film Determined by Kelvin Force Microscope
- Application of Scanning Probe Microscope(SPM) for Novel Characterization of Ferrolectric Capacitor
- Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method
- FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED Pb(Zr, Ti)O_3 CAPACITORS GROWN ON IrO_2 ELECTRODE
- Application of Scanning Probe Microscope(SPM)for Novel Characterization of Ferrolectric Capacitor
- Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method
- FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED Pb(Zr, Ti)O_3 CAPACITORS GROWN ON IrO_2 ELECTRODE
- The Role of an Overlayer in the Formation of Ni-based Taansparent Ohmic Contacts to p-GaN : Semiconductors
- Etching Effects on Ferroelectric Capacitors with Multilayered Electrodes
- Preparation of Room-Temperature Photoluminescent Nanoparticles by Ultrafast Laser Processing of Single-Crystalline Ge