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Lg Electronics Inst. Technol. Seoul Kor | 論文
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability
- Analytical Model of Human Body Model Electrostatic Discharge Current Distribution and Novel Electrostatic Discharge Protection Structure
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- Self-Induced Transparency in Samarium Atomic Vapor under Condition of High Temperature and High Density
- Effect of Microwave Pulse on the Optical Properties of Hydrogenated Amorphous Silicon Thin Films Deposited by Electron Cyclotron Resonance Plasma
- Effects of Magnetic Properties and Layer Thickness on the Readout Performance of Magnetic Amplifying Magneto-Optical System Disks
- Laser Graphic Video Display using Silicon Scanning Mirrors with Vertical Comb Fingers
- Characterization of Silicon Scanning Mirror for Laser Display
- Preparation of BaTiO_3 Thin Films by Metalorganic Chemical Vapor Deposition Using Ultrasonic Spraying ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Crystal Structure and Microstructure of Nitrogen-Doped Ge_2Sb_2Te_5 Thin Film
- Suppression of Jitter Bump GeSbTe Phase-Change Optical Disk
- New Technique for the Thermal Resistance Measurement of Power Field Effect Transistors Using Cathodoluminescence
- Aluminum Chemical Vapor Deposition Technology for High Deposition Rate and Surface Morphology Improvement
- Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
- Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor
- Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET
- Origin of Abnormal Grain Growth in Tungsten Bronze Structured Ferroelectric Sr_xBa_Nb_2O_6 Ceramics
- Site Occupancy and Dielectric Characteristics of Strontium Barium Niobate Ceramics : Sr/Ba Ratio Dependence
- Ring Dark Solitary Waves on a Gaussian Background Beam