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LSI Laboratory, Mitsubishi Electric Corporation | 論文
- Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Mechanism for AlSiCu Alloy Corrosion
- SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
- Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
- Speculative Execution and Reducing Branch Penalty on a Superscalar Processor (Special Issue on New Architecture LSIs)
- Novel Electron Beam Direct Writing Technique for the Hole Pattern of Quarter-Micron Devices
- A 12bit Resolution 200 kFLIPS Fuzzy Inference Processor (Special Issue on New Architecture LSIs)
- A 10 bit 50 MS/s CMOS D/A Converter with 2.7 V Power Supply (Special Section on Low-Power and Low-Voltage Integrated Circuits)
- Transient Analysis of Switched Current Source
- Effect of Phase Error on Lithographic Characteristics Using Attenuated Phase-Shifting Mask
- Dynamic Thermal Response of Photomasks Caused by Excimer Laser Pulse
- A Novel CMOS Structure with Polysilicon Source/Drain (PSD) Transistors by Self-Aligned Silicidation (Special Issue on Sub-Half Micron Si Device and Process Technologies)