Dynamic Thermal Response of Photomasks Caused by Excimer Laser Pulse

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概要

• 論文の詳細を見る

• Theoretical calculations have been performed to obtain information on the dynamic thermoelasticity in photomasks during pulsed exposure due to a KrF excimer laser stepper. A dynamic model based on lumped heat capacity and in-plane stress systems has been proposed. The calculations were performed at an 8μJ/cm^2 energy density with pulse duration of 15 ns. It was found that the displacement caused by thermal expansion takes place at a 10μs time lapse after pulsed exposure, while there is no influence on the printed feature shift. Since the resonance frequency of 7.14 kHz is higher than the practical pulse repetition frequency of 200〜800 Hz, the photomasks cannot receive thermal damage due to the resonance. Therefore, excimer laser lithography based on pulsed exposure will be a useful method for fabricating sub-half-micron LSI devices.

• 社団法人応用物理学会の論文
• 1994-01-15

著者

• Chiba A

  Aset Euvl Lab. Kanagawa Jpn

• WATAKABE Yaichiro

  LSI Laboratory, Mitsubishi Electric Corporation

• CHIBA Akira

  LSI Laboratory, Mitsubishi Electric Corporation

• Watakabe Yaichiro

  Lsi Laboratory Mitsubishi Electric Corporation

• Chiba Akira

  Lsi Laboratory Mitsubishi Electric Corporation

関連論文

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• X-Ray Mask Fabrication Process Using Cr Mask and ITO Stopper in the Dry Etching of W Absorber
• Novel Electron Beam Direct Writing Technique for the Hole Pattern of Quarter-Micron Devices
• Dynamic Thermal Response of Photomasks Caused by Excimer Laser Pulse

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