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Kanagawa High-technology Foundation | 論文
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Dense Nano-structured and Preferentially-oriented Anatase Synthesized by Pulsed High Current Heating
- Compositional Effects of Ytterbia-Alumina Additives on Millimeter-Wave Sintering of Silicon Nitride(Physics, Processes, Instruments & Measurements)
- Effects of Ion-Beam-Irradiation on Morphology and Densification of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
- Preparation and Nanoscale Characterization of Highly Stable YBa_2Cu_3O_ Thin Films
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
- Morphology and Microstructure of Hard and Superhard Zr-Cu-N Nanocomposite Coatings
- Shunting arc generation and deposition of amorphous carbon
- Preparation of TiN film on an Φ80mm pipe by DC vacuum cathodic arc deposition and PBII
- Zr-based Hydrogen Absorbing Films Prepared by Ion Beam Assisted Deposition(Physics, Processes, Instruments & Measurements)
- Estimation of Homogeneity in Pulsed High Current Sintering by Crystallographic Character of Consolidated Anatase
- Tribological Property of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
- Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
- Pulsed Laser Deposition of C_ Thin Films with Atomically Smooth Surface
- Growth of β-FeSi_2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films
- Heteroepitaxial Growth of c-Axis-Oriented BaTiO_3 Thin Films with an Atomically Smooth Surface
- Hydrogenation of High-Concentration Arsenic-Doped Silicon Using Radio Frequency Hydrogen Plasma
- Millimeter-Wave Annealing of SrBi2Ta2O9 Films Prepared by Sol–Gel Method
- Tribological Property of CeO2 Films Prepared by Ion-Beam-Assisted Deposition