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Jst‐presto Saitama Jpn | 論文
- 26aWZ-4 P添加Si中の転位構造(26aWZ 格子欠陥・ナノ構造(半導体),領域10(誘電体格子欠陥,X線・粒子線フォノン))
- 26aWZ-3 高濃度に不純物を添加したゲルマニウム結晶中での転位の挙動(26aWZ 格子欠陥・ナノ構造(半導体),領域10(誘電体格子欠陥,X線・粒子線フォノン))
- Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
- Semiconductor Spin Electronics
- A Spin Esaki Diode
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- 28aXT-5 ラフネスを導入したSi表面上におけるAu原子の拡散(格子欠陥・ナノ構造)(領域10)
- 20pYD-5 電子線照射した Si(100) 表面上での吸着原子の拡散と集合
- 28pPSB-44 Si 表面ナノホールが存在する表面での Au 集合体の形成
- 27aYG-8 再成長界面を基点に形成されるAlGaAs中の双晶の光学特性(化合物・輸送・アモルファス・不純物)(領域4)
- Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
- Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Photoresponse of Carbon Nanotube Field-Effect Transistors
- Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters