スポンサーリンク
Japan Atomic Energy Res. Inst. Takasaki Jpn | 論文
- Oxygen tracer diffusion in magnesium-doped ZnO ceramics
- Single-, Double- and Triple-Electron Capture Cross Sections for Multicharged Slow Carbon Ions in H_2, CH_4, C_2H_6, C_3H_8 and CO_2 Molecules
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Ion Beam as a Noble Tool to Induce Apoptosis-Like Cell Death in Roots of Maize (Zea mays L. )
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Investigation on buffer layer for InN growth by molecular beam epitaxy
- Effect of post-annealing on structural and optical properties, and elemental distribution in heavy Eu-implanted ZnO thin films
- Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Application of a Collimated Heavy Ion Microbeam System at TIARA for Local Irradiation of Biological Targets
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
- Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases
- Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy : Instrumentation, Measurement, and Fabrication Technology
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
スポンサーリンク