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Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul National Unive | 論文
- Nanoscale Multi-Line Patterning Using Sidewall Structure
- Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology
- Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
- Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
- Single Electron Memory with a Defined Poly-Si Dot Based on Conventional VLSI Technology
- Room Temperature Coulomb Oscillation of a Single Electron Switch with an Electrically Formed Quantum Dot and Its Modeling
- Room Temperature Coulomb Oscillation of a Single Electron Switch with an Electrically Formed Quantum Dot and Its Modeling
- Magnetoluminescence Study on the Low-Dimensionality of Excitons Confined in a Narrow GaAs/AlGaAs Quantum Well
- Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process
- A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology
- Silicon Quantum Tunneling Devices - FIBTET and MOSET
- Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region
- Indium Doped nMOSFETs and Buried Channel pMOSFETs with n^+ Polysilicon Gate
- Channel Doping Engineering with Indium as an Alternative p-Type Dopant
- Influence of Oxygen Deficiency on Electrical Properties in the Superconductor (Bi, Pb)_2Sr_2Ca_2Cu_3O_y Phase
- Oxygen Behavior in the Superconductor (Bi,Pb)_2Sr_2Ca_2Cu_3O_y Phase Studied by X-Ray Photoelectron Spectroscopy
- Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region