スポンサーリンク
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan | 論文
- Velocity Dependence and Limitations of Friction Force Microscopy of Mica and Graphite
- Tunneling-Injection Single-Photon Emitter Using Charged Exciton State
- The Use of Laser Burst for Volumetric Displaying Inside Transparent Liquid
- Estimation of Electrically-Pumped Dynamic Nuclear Polarization in a Quantum Hall Device Using Tilted Magnetic Fields
- Vapor Hydrofluoric Acid Sacrificial Release Technique for Micro Electro Mechanical Systems Using Labware
- Characteristics of Single Crystal ZnO Annealed in a Ceramic ZnO Box and Its Application for Epitaxial Growth of GaN
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
- Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)
- Observation of Self-Assembled Monolayer Using the Lateral Resonance of the Cantilever in the Contact and Noncontact Regions
- Generation of Sub 50-fs Mid-Infrared Pulses by Optical Parametric Amplifier Based on Periodically-Poled MgO:LiNbO3
- Effects of V-Doping on Mixed Conduction Properties of Bismuth Titanate Single Crystals
- Nanoscale Mechanics of Carbon Nanotube Evaluated by Nanoprobe Manipulation in Transmission Electron Microscope
- Current Drive Improvement Using Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable-Threshold-Voltage Complementary MOS (VTCMOS)
- Optimum Device Consideration for Standby Power Reduction Scheme Using Drain-Induced Barrier Lowering
- Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors
- Polarization Properties of Superlattice-Structured Bi4Ti3O12-BaBi4Ti4O15 Single Crystals and Ceramics: Comparison with Bi4Ti3O12 and BaBi4Ti4O15
- Growth of $\beta$-FeSi2 Layers on Si(100) Substrates by Exchange Reaction between Si and Molten Salts
- Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures