スポンサーリンク
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan | 論文
- Determination of Bulk Minority-Carrier Lifetime in BaSi
- Determination of Bulk Minority-Carrier Lifetime in BaSi₂ Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
- Energy Spectra of Electrons Induced by MeV Atom Clusters
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C–SiC Intermediate Layers
- Leakage Current Distribution of Cu-Contaminated Thin SiO2
- Quantitative Evaluation of Dopant Concentration in Shallow Silicon p-n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy (Special Issue : Solid State Devices and Materials)
- Evaluation of SOI Substrates by Positron Annihilation
- Optical Absorption Properties of BaSi2 Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy