スポンサーリンク
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan | 論文
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Si(111) Surface under Phase Transitions Studied by the Analysis of Inner Layer Structures Using Bias-Dependent Scanning Tunneling Microscopy
- Initial Stage of Nitridation of GaAs(001): Atomic Scale View
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
- AES Observation on the Photochemically Washed Surface of GaAs
- Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
- Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
- The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices
- Phase Transition between c(4 × 2) and p(2 × 2) Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
- Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution
- Characteristic of the Si(100) Surface Low-Temperature Phase with Two Competing Structures Investigated by Rare Gas Adsorption