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Institute Of Precision Engineering National Chung Hsing University | 論文
- Analysis of Designing Multichannel Fiber Bragg Gratings with Different Inverse Design Algorithms
- Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
- Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
- Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
- Enhanced Extraction Efficiency of Vertical Conducting InGaN LEDs with Micro-Pillar Surface
- GaN-Based Green Resonant Cavity Light Emitting Diodes
- Characteristics of Flip-Chip InGaN LEDs on Patterned Sapphire Substrates
- Surface texturing for wafer-bonded GaN/mirror/Si light-emitting diodes
- Near-Ultraviolet InGaN LEDs Grown on Patterned Sapphire Substrates
- Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers
- Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes
- Wafer-Bonded 859-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrate with Metal Mirror
- High-Brightness Wafer-Bonded ITO/AlGaInP/Mirror/Si Light Emitting Diodes
- Spectral Switches of Gaussian Pulse from Adjustable Tilted Mirror in Far Field
- Spectrum Compression of Gaussian Pulse from Annular Aperture in Far-Field
- Far-Field Spectral Intensity Characteristics of a Time-Dependent Gaussian Pulse from Two Types of Apodized Slits
- Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing
- Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
- Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
- Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates