スポンサーリンク
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University | 論文
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
- DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor
- Characteristics of an InGaAs/InGaAsP Composite-Collector Heterojunction Bipolar Transistor (CCHBT)
- A New Camel-Gate Field Effect Transistor with a Composite Channel Structure
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode
- Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film
- Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky DiodeS : Semiconductors
- Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon
- A 10-in. Diagonal ZnS:Mn TFEL Panel Fabricated by a Sequential Vacuum Deposition Apparatus
- Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching
- ZnS Thin Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- 新型液晶投影電視的照明系統
- Temperature Dependence of Gate Current and Breakdown Behaviors in an n^+-GaAs/p^+ -InGaP/n^- -GaAs High-Barrier Gate Field-Effect Tranistor
- Multiple Switching Phenomena of AlGaAs/InGaAs/GaAs Heterostructure Transistors
- IN-PLANE SWITCHING液晶顯示器操作原理的分析與模擬
- 以三推査表和插値分析液晶投影電机的色彩