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Institute Of Electronic Engineering National Tsing Hua University | 論文
- A Fully Integrated SiGe Optical Receiver Using Differential Active Miller Capacitor for 4.25Gb/s Fiber Channel Application
- A High Performance Photodetector Suitable for Visible Light and Near IR Applications
- Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
- Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
- A New Control Chip for an Electronic Circuit Breaker Using 0.6um CMOS Technology
- Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress
- A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current
- Deposition of Transparent Indium Molybdenum Oxide Thin Films and the Application for Organic Solar Cells (Special Issue : Solid State Devices and Materials (1))
- A High Performance Photodetector Suitable for Visible Light and Near Infrared Applications
- Measurement of Junction Temperature in a Nitride Light-Emitting Diode
- Superior Reliability of Gate-All-Around Polycrystalline Silicon Thin-Film Transistors with Vacuum Cavities Next to Gate Oxide Edges
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
- Hot-Carrier Degradation Rate of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors under Maximum Substrate Current Stress Conditions
- Simple and Accurate Method of Modeling Gate Current of N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor
- Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress