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IMEC, Kapeldreef 75, 3001 Leuven, Belgium | 論文
- High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric
- Improved Performance of In0.53Ga0.47As-Based Metal--Oxide--Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition
- Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
- AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility
- High Efficiency Silver-Free Heterojunction Silicon Solar Cell
- Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
- Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)