Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model

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概要

• 論文の詳細を見る

• We introduce an analytical physics-based model for the transient simulation of anomalous charge loss in flash memories. This model is applied to determine the bit failure rate and the time-to-failure due to anomalous charge loss. This model can also be used to introduce an accelerated method for the detection of bits suffering from anomalous charge loss.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2002-04-30

著者

• Schuler Franz

  Infineon Technologies Affiliated To Imec

• JACOB Michael

  Infineon Technologies

• Tempel Georg

  Infineon Technologies Affiliated To Imec

• Melzner Hanno

  Infineon Technologies Otto-hahn-ring

• Schuler Franz

  Infineon Technologies, affiliated to IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Hendrickx Paul

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Wellekens Dirk

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Van Houdt

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Jacob Michael

  Infineon Technologies, FDA 2-5-1, Toshiba Design Square#201, 247-8585 Sakae-ku, Yokohama, Japan

関連論文

• Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model
• Time Dependent Anomalous Charge Loss Modeling in Flash Memories and an Accelerated Testing Procedure
• Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model

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