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IC Division, Nippon Electric Co., Ltd. | 論文
- Oxidation Process of Porous Silicon
- Oxygen Sensitivity of Porous Silicon Formed by Anodic Reaction
- Electrical Characteristics of Metal Al_2O_3-SiO_2-Si (MAOS) Transistors
- An Instability of MAOS Structures
- Effects of the Al_2O_3 Film on the Electrical Characteristics of the Planar p-n Junctions
- Impurity Diffusion in Porous Silicon Formed by Anodic Reaction
- Influence of Al_2O_3 Deposition Temperature on Charge-Storage and Retention in MA(O)S Structures
- The Effect of Electrode on the C-V Hysteresis Behavior of MAS and MAOS Structures