Impurity Diffusion in Porous Silicon Formed by Anodic Reaction

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1974-10-05

著者

• Yamanaka Hiroshi

  Ic Division Nippon Electric Co. Ltd.

• Kamoshida Mototaka

  Ic Division Nippon Electric Co. Ltd.

• Yamanaka Hiroshi

  Ic Division

• HANETA Yuuichi

  IC Division, Nippon Electric Co., Ltd.

• Haneta Yuuichi

  Ic Division Nippon Electric Co. Ltd.

関連論文

• A 64K Dynamic MOS-RAM Using Short-Channel, Channel-Dope Technology : A-3: MOS DEVICE AND LIST (3)
• Oxidation Process of Porous Silicon
• Oxygen Sensitivity of Porous Silicon Formed by Anodic Reaction
• An Investigation of Stability of p-Channel Ion-Implanted MOS Transistors by BT Treatments
• Oriented Growth of Sputtered Platinum Films
• Precise Measurements of the Infrared Spectra near 9μm Obtained from RF-Sputtered Silicon Oxide (SiO_x) Films
• Impurity Diffusion in Porous Silicon Formed by Anodic Reaction

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