Oxygen Sensitivity of Porous Silicon Formed by Anodic Reaction

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1975-02-05

著者

• Yamanaka Hiroshi

  Ic Division Nippon Electric Co. Ltd.

• Sakamoto Mitsuru

  Ic Division Nippon Electric Co. Ltd.

• HAMANO Kuniyuki

  IC Division, Nippon Electric Co., Ltd.

• Yamanaka Hiroshi

  Ic Division

• Hamano Kuniyuki

  Ic Division Nippon Electric Co. Ltd.

• Sakamoto Mitsuru

  Ic Division

• YAMANAKA Hiroshi

  IC Division, Nippon Electric Co., Ltd.

関連論文

• A 64K Dynamic MOS-RAM Using Short-Channel, Channel-Dope Technology : A-3: MOS DEVICE AND LIST (3)
• Oxidation Process of Porous Silicon
• Oxygen Sensitivity of Porous Silicon Formed by Anodic Reaction
• Electrical Properties of MAOS Structures as Revealed by Conductance Technique
• Impurity Diffusion in Porous Silicon Formed by Anodic Reaction

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