Precise Measurements of the Infrared Spectra near 9μm Obtained from RF-Sputtered Silicon Oxide (SiO_x) Films

概要

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Optical properties of RF-sputtered silicon oxide films is studied as a function of sputtering voltage, film thickness and heat treatment conditions. The wavelength of 9-μm absorption band becomes shorter with increasing sputtering voltage and film thickness for as-sputtered films, but this is not the case for films heat-treated above 700℃ in Ar. This phenomenon can be explained by oxygen deficiency in the sputtered films, the degree of which is estimnated at 6% after the heat-treatment.
社団法人応用物理学会の論文
1972-01-05