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Hokkaido Polytechnic College | 論文
- Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
- Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse - Assisted Electrochemical Process
- Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO_2 Films
- Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics
- Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process
- Application of the Indirect Fictitious-Boundary Integral Method to Thermal Stress Problems
- Properties of TiN Films on Heated Substrate Below 550℃ by 50 Hz Plasma-Enhanced Chemical Vapor Deposition
- Annealing Behavior of HF-Treated GaAs Capped with SiO_2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition
- FOREWORD