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Hitachi Ltd. Central Research Laboratory | 論文
- Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
- Arithmetic Circuit Verification Based on Symbolic Computer Algebra
- Formal Design of Arithmetic Circuits Based on Arithmetic Description Language(Circuit Synthesis,VLSI Design and CAD Algorithms)
- A Shortest Path Search Algorithm Using an Excitable Digital Reaction-Diffusion System (Signal Processing Algorithm, Multidimensional Signal Processing and Its Application)
- A Palmprint Recognition Algorithm Using Phase-Only Correlation
- A Fingerprint Matching Algorithm Using Phase-Only Correlation(Digital Signal Processing for Pattern Recognition)(Applications and Implementations of Digital Signal Processing)
- Changes in Targeting Efficiencies of Proteins to Plant Microbodies Caused by Amino Acid Substitutions in the Carboxy-terminal Tripeptide
- A 270-MHz CMOS Quadrature Modulator for a GSM Transmitter(Special Section on Analog Circuit Techniques and Related Topics)
- Structures and Superconducting Properties of Y-Ba-Cu-O Sputtered Films
- Quantum Mechanical Analysis of Accumulation Layers in MOS Structures
- Singlet-Triplet Energy Gaps of Quinonoidal Dinitrenes
- ESR Study of Intramolecular Magnetic Interactions in Bis(nitrenophenyl) Sulfides
- ESR of Excited Quintet States in 3,3'-Dinitrenobenzophenone
- The Photolysis of 4,4'-Diazidobiphenyl in Rigid Matrices at Low-Temperature
- Intermediates from Low-Temperature Photolysis of 4,4'-Diazidobiphenyl in Rigid Matrices
- Hydrogen Diffusion and Chemical Reactivity with Water on Nearly Ideally H-terminated Si(100) Surface
- Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
- Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multiple Quantum Welts
- Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO_2 after Gate Etching