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Hiroshima university | 論文
- Steady-State Operation Scenario and the First Experimental Result on QUEST
- 1P-017 真空紫外円二色性分光法による生体膜と結合した蛋白質の二次構造解析(蛋白質・構造(1),第46回日本生物物理学会年会)
- Vacuum-Ultraviolet Circular Dichroism Spectrophotometer Using Synchrotron Radiation: Optical System and On-line Performance
- A Geographical Approach to Environmental Problems
- An Analysis of Test-Type Related Variability of Interlanguage Performance among Japanese EFL Learners
- International Intercomparison of Retrospective Luminescence Dosimetry Method : Sampling and Distribution of the Brick Samples from Dolon' Village, Kazakhstan
- Unstable-type Chromosome Aberrations in Lymphocytes from Individuals Living near Semipalatinsk Nuclear Test Site
- Recent Changes in the Distribution of Wild Boars and the Trade of Their Flesh in Japan
- Metastable Domain Structures of Ferromagnetic Microstructures Observed by Soft X-Ray Magnetic Circular Dichroism Microscopy
- Around Semipalatinsk Nuclear Test Site : Progress of dose Estimations Relevant to the Consequences of Nuclear Tests : A summary of 3^ Dosimetry Workshop on the Semipalatinsk Nuclear Test Site Area, RIRBM, Hiroshima University, Hiroshima, 9-11 of March
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- -P339- A New Method For Determining Cardiac Output by Velocities on Spherical Surface from Color Doppler Flow Imaging Based on The Continuity Equation(PROCEEDINGS OF THE 59th ANNUAL SCIENTIFIC MEETING OF THE JAPANESE CIRCULATION SOCIETY)
- Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Some Effects of Stern Configurations on Resistance and Propulsion Properties