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Hanyang Univ. Seoul Kor | 論文
- Side Information Inserted Pilot Tone Transmission for PAPR Reduction in OFDM
- Exact Distribution of the Amplitude of Adaptively Selected OFDM Signal Samples
- Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs
- Electrical and Microstructural Degradation with Decreasing Thickness of (Ba, Sr)TiO_3 Thin Films Deposited by RF Magnetron Sputtering
- 豚流行性下痢ウイルス(PEDV)に対する鶏卵黄免疫グロブリン(IgY)の子豚での免疫予防効果
- Up-Regulation of Photoprotection and PSII-Repair Gene Expression by Irradiance in the Unicellular Green Alga Dunaliella salina
- Analysis of Read-out Signals in Land/Groove Recording of a Phase-Change Optical Disc
- A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient
- Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In_2O_3 Nano-Particles Embedded in Polyimide Insulator
- Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Vertical-Cavity Surface-Emitting Lasers for Optical Data Storage
- An Efficient Adaptive Feedback Cancellation for Hearing Aids(Speech and Hearing)
- A High Performance RF LDMOS Power Transistor for Cellular Station Applications(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Formation of p-Type Hg_Cd_Te Epilayers Grown on CdTe Buffer Layers on GaAs (211) B due to In Situ Thermal Annealing
- Hydrogenation and Annealing Effects on Deep Levels in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates : Semiconductors
- A Study of Photoelectrochemical Oxidation of GaN Epilayers by Extrinsic Photoconductivity : Semiconductors
- Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere
- Annealing Effect on Passivated Deep Levels in GaN Epilayers
- Optical and Electrical Properties of Si Nanocrystals Embedded in SiO_2 Layers