スポンサーリンク
Graduate School of Engineering, Kanazawa Institute of Technology | 論文
- Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)
- Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
- New technique for the formation of a three-dimension high-speed imaging of the subsurface crack of the opaque material measured by photoacoustic microscope
- InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change
- Low-Voltage Mach-Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well
- Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow
- Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well
- Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well