InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change
スポンサーリンク
概要
- 論文の詳細を見る
An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) exhibiting a giant electrorefractive index change was proposed and has been studied theoretically and experimentally. Giant electrorefractive sensitivity $|dn/dF|$ ($4.4\times 10^{-4}$ cm/kV) at a wavelength range with a width of over 100 nm can be expected at an electric field of approximately $F=-30$ to $-60$ kV/cm. The FACQW structure was successfully fabricated using molecular beam epitaxy (MBE). The results of photoabsorption current measurements are consistent with the theory. The giant electrorefractive index change of the FACQW is very promising for realizing low-voltage and high-speed compact Mach--Zehnder modulators and switches.
- 2011-03-25
著者
-
ARAKAWA Taro
Graduate School of Engineering, Yokohama National University
-
TADA Kunio
Graduate School of Engineering, Kanazawa Institute of Technology
-
Yamaguchi Koichiro
Graduate School Of Engineering Yokohama National University
-
Ide Tomoyoshi
Graduate School Of Engineering Yokohama National University
-
Yamaguchi Koichiro
Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
-
Arakawa Taro
Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
-
Toya Takahiro
Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
-
Ushigome Motoki
Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
-
Toya Takahiro
Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
-
Tada Kunio
Graduate School of Engineering, Kanazawa Institute of Technology, Minato, Tokyo 105-0002, Japan
-
Ide Tomoyoshi
Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
-
Arakawa Taro
Graduate School of Engineering Yokohama National Univ
関連論文
- Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)
- Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
- InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change
- Low-Voltage Mach-Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well
- InGaAs/InAlAs Multiple Quantum Well Mach-Zehnder Modulator with Single Microring Resonator (Special Issue : Solid State Devices and Materials (1))
- Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow
- Proposal of Compact Tunable 1\times 2 Multimode Interference Splitter Based on Multiple Quantum Well
- Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well
- Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well
- Proposal of Compact Tunable 1 × 2 Multimode Interference Splitter Based on Multiple Quantum Well (Special Issue : Solid State Devices and Materials)
- C-3-69 Ion Biosensor Based on Silicon Microring Resonator Mach-Zehnder Interferometer for Medical Applications
- Thermo-Optic Silicon Microring-Loaded Mach-Zehnder Modulator and Switch
- Thermo-Optic Silicon Microring-Loaded Mach-Zehnder Modulator and Switch