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Graduate School of Electrical Engineering, Osaka University | 論文
- Superior Properties of Cesium Triborate CsB_3O_5 for 194 nm Light Generation with Nd:Y_3Al_5O_ Laser
- Refractive Index of CsB_3O_5 Grown by Top-Seeded Solution Growth
- 387-nm Generation in Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Utilization for 193-nm Light Source
- A Palm-Size Ultraviolet Laser Using a Combination of a Monolithic Wavelength Converter and an Optical Fiber
- Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
- Generation of Tunable Near-UV Laser Radiation by Type-I Second-Harmonic Generation in a New Crystal, K2Al2B2O7 (KABO)
- Bulk Crystal Growth of Stilbazolium Derivatives for Terahertz Waves Generation
- Synthesis of GaN Crystal Using Gallium Hydride
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Examination of Effects of H2 Concentration in Reactant Gas on GaN Growth by Gallium Hydride Vapor Phase Epitaxy
- Growth of Thick GaN Films with High Growth Rate Using Sublimation Method under High Pressure
- Phase-Matching Properties at around 190nm of Various Borate Crystals
- Polymorphs of Rubrene Crystal Grown from Solution
- Solution Growth of Rubrene Single Crystals Using Various Organic Solvents
- Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial Processes
- Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
- Structural Analysis of Carbon-Added Na--Ga Melts in Na Flux GaN Growth by First-Principles Calculation
- 387-nm Generation in GdxY1-xCa4O(BO3)3 Crystal and Its Utilization for 193-nm Light Source
- Structural Analysis of Carbon-Added Na-Ga Melts in Na Flux GaN Growth by First-Principles Calculation (Special Issue : Recent Advances in Nitride Semiconductors)
- Al Doping of CsLiB_6O_ for High Resistance to Ultraviolet-Induced Degradation