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Graduate School of Advanced Sciences of Matter Hiroshima University | 論文
- Image Segmentation/Extraction Using Nonlinear Cellular Networks and Their VLSI Implementation Using Pulse-Modulation Techniques(Special Section on Analog Circuit Techniques and Relate)
- A 1-D CMOS PWM Cellular Neural Network Circuit and Resistive-Fuse Network Operation
- Photoemission Spectroscopy of Spinel-Type CuV_2S_4 Single Crystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- 26aPS-2 High-resolution angle-resolved photoemission study of Al(100) single crystal
- Raman Scattering and Infrared Absorption Investigation of Hydrogen Configuration State in Mechanically Milled Graphite under H_2 Gas Atmosphere (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Composite Materials based on Light Elements for Hydrogen Storage
- A VLSI Spiking Feedback Neural Network with Negative Thresholding and Its Application to Associative Memory(Novel Device Architectures and System Integration Technologies)
- Effects of Locally Targeted Heavy-ion and Laser Microbeam on Root Hydrotropism in Arabidopsis thaliana
- 20pZA-1 Temperature-Dependent Electronic Structures of Yb_xC_ Films
- Production of Recombinant Human Monoclonal Antibody Using ras-Amplified BHK-21 Cells in a Protein-free Medium
- 23aRC-8 The photo-induced commensurate modulated structure in site selective spin crossover complex trans-[Fe(abpt)_2(NCS)_2].
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Electrical, Magnetic and NMR Studies of Ge-Based Filled Skutterudites RPt_4Ge_ (R=La, Ce, Pr, Nd)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
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