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Graduate School of Advanced Sciences of Matter Hiroshima University | 論文
- Electron Charge Density Study on the Bonding Nature in MoO_3
- Electron Charge Density Study on the Bonding Nature in MoO_3
- 1P171 多機能GFPタグで見えてきた哺乳類細胞におけるダイニン-ダイナクチンのダイナミックな動態(分子モーター,第48回日本生物物理学会年会)
- 27p-YR-9 二段階励起を利用した原子パリティ非保存実験
- Fabrication of Carbon Nanotube and Nanorod Arrays Using Nanoporous Templates
- Contact Resistance Reduction Using Vacuum Loadlock System and Plasma Dry Cleaning
- Formation of Al Dot Hexagonal Array on Si Using Anodic Oxidation and Selective Etching : Surfaces, Interfaoes, and Films
- Adsorbed Water on a Silicon Wafer Surface Exposed to Atmosphere : Semiconductors
- Study of a Dielectric Constant Due to Electronic Polarization Using a Semiempirical Molecular Orbital Method I : Semiconductors
- Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Arrays Using DNA : Surfaces, Interfaces, and Films
- In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
- Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH_3-Nitrided Si(100)
- Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- Generation of Vorticity Hole Surrounding a Point Vortex in a Nonneutral Plasma
- A Single-Chip MPEG-2 422P@ML Video, Audio, and System Encoder with a 162MHz Media-processor Core and Dual Motion Estimation Cores
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