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Fujitsu Ltd. | 論文
- Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
- Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
- Calculation of Impurity Concentrations in LPE InP Layers
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- InGaP Channel FET with High Breakdown Voltage
- Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1.95GHz Wide-Band CDMA Cellular Phones (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- A Low Distortion pHEMT with Newly Developed Composite Channel Structure
- AuAl_2 Thin Film Resistors for Josephson Integrated Circuits
- 5.6 ps Gate Delay All Refractory Josephson OR Gate with Modified Variable Threshold Logic
- Office Automation in Network Computing
- Using Computer Modeling to Study Lactam Ring Formation during Monatin Analogue Synthesis
- The C-C Bond Formation with Alkyl Halide in Monatin Analogue Synthesis and Their Tastes Expression
- Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
- In_Ga_AS/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In_Ga_As Ternary Substrate
- MEMS Variable Capacitor Using Cross Membranes for RF Band
- Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
- Design Optimization of a High-Speed, Area-Efficient and Low-Power Montgomery Modular Multiplier for RSA Algorithm(Digital, Low-Power LSI and Low-Power IP)