スポンサーリンク
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan | 論文
- Advanced Input/Output Technology Using Laterally Modulated Channel Metal–Oxide–Semiconductor Field Effect Transistor for 65-nm Node System on a Chip
- Technological Trends of Soft Error Estimation Based on Accurate Estimation Method
- New Scheme of Electrostatic Discharge Circuit Simulations Using Protection Device Model with Generated-Hole-Dependent Base Resistance
- Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- Study of Peeling at Doped NiSi/SiO2 Interface
- Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50 nm p-Metal Oxide Semiconductor Field-Effect Transistors
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure